The silicon (220) lattice spacing : A new measurement and prospects
This paper discusses an experiment to measure the (220) lattice spacing in silicon by X-ray/optical interferometry. The experimental set-up is described and the results are discussed. Data collected show that the experiment is capable of 5 x 1.0 E-9 resolution and has led to a determination of silicon d(220) which agrees with the value estimated in the 1986 adjustment of the fundamental physical constants.
Bibliographic Reference: Paper presented: CPEM 94, Conference on Precision, Boulder, Colorado (US), June 27 - July 1, 1994
Availability: Available from (1) as Paper EN 38012 ORA
Record Number: 199410231 / Last updated on: 1994-11-28
Original language: en
Available languages: en