The electrical resistivity of vacancies in copperFunded under: JRC-ADVMAT 2C
The electrical resistivity of a copper wire has been repeatedly measured in situ between ambient temperature and 1064 C and from this temperature down again to ambient temperature. These measured curves were fitted by a 2nd order polynomial between 400 and 700 C and extrapolated to high temperatures. The difference in electrical resistivity between the extrapolated curve and the measured curve is attributed to vacancy type defects, the concentration of which increases with increasing temperature. An effective formation energy of E(F)(IV) = 1.20eV, an electrical resistivity per vacancy of rho(o) = 1.9 x 10 E-4 cm and an effective vacancy concentration at the melting temperature of copper of about C(eff)(v) = 7.6 x 1.0 E-4 was derived in agreement with data reported in 1977. It is shown that the rule of Matthiessen is approximately fulfilled and that the electrical resistivity of a vacancy is almost the same if measured at 4K and at the melting temperature of copper.
Bibliographic Reference: EUR 15772 EN (1994) 13 pp., FS, free of charge
Availability: Available from Joint Research Centre, Publication Department, I-21020 Ispra (Va.) (IT)
Record Number: 199410808 / Last updated on: 1995-03-21
Original language: en
Available languages: en