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The oxidation resistance of two commercial materials, a hot isostatically pressed silicon carbide and a hot-pressed silicon nitride, was studied in 1 % SO(2)-air in the temperature range 1100 - 1500 C for exposure times up to 1000 h. No significant difference in weight change was found between the two materials after 1000 h at 1100 C although a thinner and less adherent oxide was found on the SiC material. The oxidation kinetics for both materials up to 1300 C were found to be parabolic. At 1300 C and above, silicon carbide was markedly more resistant to oxidation. The presence of SO(2)/SO(3) was found not to affect the oxidation kinetics significantly and at these temperatures sulphate formation leading to hot salt corrosion was not encountered.

Additional information

Authors: FORDHAM R J, JRC Petten (NL);NORTON J F, JRC Petten (NL);BREGANI F, ENEL-SpA, R&D, CRAM, Milano (IT)
Bibliographic Reference: Paper presented: 8th CIMTEC World Ceramics Congress, Firenze (IT), June 28 - July 4, 1994
Availability: Available from (1) as Paper EN 38353 ORA
Record Number: 199410851 / Last updated on: 1994-11-28
Original language: en
Available languages: en