A combined plasma-surface model for the deposition of C:H films from a methane plasma
This report investigates the deposition of C:H layers by an electron cyclotron resonance plasma from methane. C:H was deposited at a methane pressure of 1.6 Pa and a substrate temperature between room temperature and 700 K. The film composition, morphology and structure were investigated by high energy ion beam analysis and scanning electron microscopy. A combined plasma-surface model for thin film deposition is proposed, which includes the electron-induced dissociation of methane in the plasma and a growth model. The dominant reactions for film growth are the adsorption of the radical CH(3), the direct incorporation of the ions, and the etching reactions with atomic hydrogen from the plasma. A consistent description for the deposition of hydrocarbon layers emerges. It compares favourably with measurements on the temperature dependence of the film growth and the influence of variable gas flow through the reactor on the growth rate and the film morphology.
Bibliographic Reference: Article: Journal of Applied Physics, Vol. 75 (1994) No. 12, pp. 7718-7727
Record Number: 199411049 / Last updated on: 1994-11-28
Original language: en
Available languages: en