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Analysis of thin film layers on bulk substrates is carried out using a technique based on the phi(rho-z) model of the depth distribution of X-ray emission. Both the composition and thickness of individual layers can be determined provided that the same element is not present in more than a single layer. The application of this method to the analysis of thin titanium-boron nitride bilayers on silicon or molybdenum substrates is discussed. X-ray intensities were measured by energy dispersive spectroscopy with a windowless or ultra thin window detector. The thickness of a 10 nm titanium layer could be estimated to within about +/- 1 nm, which is comparable with the depth resolution attainable by Auger sputter profiling.

Additional information

Authors: RICKERBY D G, JRC Ispra (IT);THIOT J-F, SAMX, Guyancourt (FR)
Bibliographic Reference: Paper presented: EMAS 93, Rimini (IT), May 9-13, 1993
Availability: Available from (1) as Paper EN 37446 ORA
Record Number: 199411157 / Last updated on: 1994-11-25
Original language: en
Available languages: en