Siliconization on FTU
In order to assess the role of low-Z impurities with regard to the operational regime of FTU, a silicon coating of the wall has been attempted in situ using a dc glow discharge and a mixture of helium with a minority of silane as feeding gas. A plasma with silicon as the dominant impurity is obtained when the limiter is still Si-coated and this has allowed the comparison of plasma characteristics with low-Z (silicon), and medium-Z (nickel) first wall materials.
Bibliographic Reference: Paper presented: 21st EPS Conference on Controlled Fusion and Plasma Physics, Montpellier (FR), June 27 - July 1, 1994
Availability: Available from (1) as Paper EN 38636 ORA
Record Number: 199411319 / Last updated on: 1994-12-06
Original language: en
Available languages: en