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Abstract

The increase of the electrical resistivity in copper materials and in gold during irradiation with 1.85 MeV electrons below the temperature corresponding to the stage III recovery region was determined. From the analysis of these data by means of rate equations, the variations of the concentrations of interstitials, vacancies and agglomerates of interstitials as a function of the irradiation time and of the irradiation temperature were determined. The number of replacement collision sequences of dynamic crowdions is about N = 4.10{4) before they convert into stable interstitials in well annealed pure copper, in commerical copper, and in pure gold. This number decreases with beryllium additions and is about N = 15 in copper doped with 763 parts per million beryllium. The rate of spontaneous annihilation of vacancies with dynamic crowdions during irradiation depends on the number of replacement collisions and the production rate is considerably decreased in pure materials with respect to the initial radiation damage rate. The recovery of the stages III and IV were investigated for copper containing 763 parts per million beryllium. After small irradiation does mainly recovery stage III and after high irradiation doses mainly recovery stage IV is observed. Activation energy values were only very slightly larger than the ones determined for pure copper. Thus the migration activation energy of copper and beryllium in the dumbbell configuration is very similar to that of self interstitials in pure copper and the binding energy of beryllium to vacancies must be very small.

Additional information

Authors: GILHAUS H, JRC Ispra (IT);SCHÜLE W, JRC Ispra (IT)
Bibliographic Reference: EUR 16007 EN (1994) 12pp., FS
Availability: Available from the Public Relations and Publications Unit, JRC Ispra, I-21020 Ispra (IT)
Record Number: 199411657 / Last updated on: 1995-03-21
Category: PUBLICATION
Original language: en
Available languages: en