Bismuth-implanted silicon reference material revisited : The concepts of traceability and the individual characterisation of chips
The concept of traceability of material characteristics certified in calibration standards and reference materials as supplied for ion beam analysis is described. Instrumentation and methods to achieve this traceability are presented. Employing thin layers as internal standards on implanted samples allows these principles to be applied to high-accuracy determinations of the retained dose of implanted atoms through Rutherford backscattering spectroscopy (RBS). This technique is demonstrated through the characterisation of a Bi-implanted silicon reference material.
Bibliographic Reference: Paper presented: NATO - Advanced Study Institute : Application of particle and laser beams in materials technology, Chaltiiditii (GR), May 8-21, 1994
Availability: Available from (1) as Paper EN 38344 ORA
Record Number: 199510430 / Last updated on: 1995-04-11
Original language: en
Available languages: en