Intensity dependence of the third-harmonic-generation efficiency for high-power far-infrared radiation in n-siliconFunded under: FP3-FUSION 11C
The third harmonic generation of far-infrared (FIR) laser radiation in n-doped silicon was measured with full temporal resolution of the power fluctuations during the FIR laser pulse. Thus, the intensity dependence of the nonlinear coefficient Chi(3) could be observed. For 2 MW incident power, corresponding to an intensity of 15 MW/cm2, at a wavelength of 676 micron, a power conversion efficiency of 1.0 E-3 was reached.
Bibliographic Reference: Article: Journal of Applied Physics, Vol. 77 (1995) No. 3, pp. 981-984
Record Number: 199510518 / Last updated on: 1995-04-11
Original language: en
Available languages: en