Preparation and characterization of cubic boron nitride and metal boron nitride filmsFunded under: JRC-ADVMAT 2C
There is a strong indication that the mechanism of c-BN film formation by commonly used physical vapour deposition (PVD) methods is based on recoil implantation of surface atoms into deeper layers. This process creates considerable compressive stress, compromising the production of technologically valuable coatings of c-BN composition. On the other hand, BN-based transition metal films can be made as hard as or even harder than c-BN films if suitable preparation methods are applied which promote nanometric grain sizes and a mixed phase composition. This paper discusses: (i) Ti implantation into hexagonal BN layers; (ii) co-sputter deposition from a Ti and Hf target, respectively, and from a BN target; (iii) Ti/BN multilayer interdiffusion. M-B-N films show good adhesion to metallic substrates such as HSS steels, and preliminary wear tests with a pin-on-disk tribometer indicate promising characteristics. Bonding and chemical composition of the films were investigated by electron spectroscopy for chemical analysis (ESCA)-Auger spectroscopy, the structure and crystallite size by glancing angle X-ray diffractometry, and the hardness and elasticity by the nanoindentation technique.
Bibliographic Reference: Paper presented: 5th Conference on Application of Surface and Interface Analysis, Acireale (IT), October 4-8, 1993
Availability: Available from (1) as Paper EN 37808 ORA
Record Number: 199510539 / Last updated on: 1995-04-21
Original language: en
Available languages: en