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The radiation damage rate in platinum was measured in the temperature range between -80 and +100 C using 2.2 MeV electrons. Irradiation below ambient temperature gave a surprisingly small increase in the electrical resistivity of about 2 n-ohms/cm. These resistivity changes were compared to results obtained for copper and gold, assuming that most of the radiation damage annihilates spontaneously during irradiation. Dynamic crowdions can recombine with vacancies on their way through the lattice and also form di-interstitials if they encounter an interstitial. This means that the concentration of vacancies is increasing and that of interstitials is decreasing with irradiation time after the formation of interstitial clusters. It is shown, by analysis of radiation damage rate data together with literature data on the recovery of point defects during annealing, that after low irradiation doses interstitials recombine with vacancies in recovery stage III (ca 300 K, reaction order two), that after medium irradiation doses interstitials recombine with vacancies in recovery stage III and the remaining vacancies annihilate in recovery stage IV, and after high irradiation doses vacancies annihilate in recovery stage IV (ca 450 K, reaction order two).

Additional information

Authors: HEIECK J, JRC Ispra (IT);SCHÜLE W, JRC Ispra (IT)
Bibliographic Reference: Paper presented: Frühjahrstagung der Deutschen Physikalischen, Berlin (DE), March 19-24, 1995
Availability: Available from (1) as Paper EN 38928 ORA
Record Number: 199510662 / Last updated on: 1995-07-07
Original language: en
Available languages: en