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Thin, hydrogenated silicon and carbon containing films have been deposited by the siliconisation procedure on targets made from some metal alloys, pure metals, graphite and Si single crystal. The deposits were investigated by electron microprobe and surface analysis techniques combined with ion sputtering, infrared spectroscopy, mass spectrometry, ellipsometry and by nuclear reaction and backscattering techniques. The stoichiometry of the layers was controlled by particle balance. Carbon and silicon form carbidic Si-C bonds, hydrogen is attached both to carbon and to silicon. The deposits are chemically inert to molecular oxygen, but they strongly getter O-ions. Chemical erosion rates of a-C/Si:H films by H(+) are a factor 30 less than those of pure carbon films (a-C:H).

Additional information

Authors: VON SEGGERN J ET AL., Forschungszentrum Jülich GmbH (KFA) (DE);HOLLENSTEIN C, Centre de Recherches en Physique des Plasmas, Ecole Polytechnique Fédérale de Lausanne (CH);KÜNZLI H, Universität Basel, Physics Department (CH);ROSS G G, INRS-Energie et Matériaux, Varennes, Québec (CA);RUBEL M, Royal Institute of Technology, Stockholm (SE);KUNZLI H, Universitat Basel, Physics Department (CH)
Bibliographic Reference: Article: Journal of Nuclear Materials, Vol. 220-222 (1995) pp. 677-681
Record Number: 199510767 / Last updated on: 1995-07-12
Original language: en
Available languages: en
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