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Abstract

The effect of boron doping on the chemical bonding in ultrathin amorphous hydrogenated carbon (C:H) films was investigated with surface sensitive spectroscopies. Undoped C:H films contain about equal amounts of carbon atoms in sp(3) and sp(2) hybridisation states. Boron doping suppresses the formation of sp(2) C centres, thereby reducing the films' graphitic constituents. Therefore, with increasing boron concentration, films exhibit enhanced capacity for H as compared to undoped films. At heated films the fraction of chemical erosion species with respect to released molecular hydrogen is reduced in B doped films. Due to the specific C/H chemistry in sp(3) dominated networks, chemical erosion and hydrogen release of heated B doped films occurs at lower temperature and in a narrower temperature range than at undoped films. The results at the model films are in excellent agreement with those reported for bulk boronised graphites and explain at a microscopic level B doping effects on erosion.

Additional information

Authors: SCHENCK A, Max-Planck-Institut für Plasmaphysik, Garching bei München (DE)
Bibliographic Reference: Article: Journal of Nuclear Materials, Vol. 220-222 (1995) pp. 767-770
Record Number: 199510772 / Last updated on: 1995-07-12
Category: PUBLICATION
Original language: en
Available languages: en
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