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Thin hydrogenated silicon- and carbon-containing films have been deposited by siliconisation on targets made from metal alloys, pure metals, graphite and Si single cystals. The deposits were investigated by electron microprobe and surface analysis techniques combined with ion sputtering, infrared spectroscopy, mass spectrometry, ellipsometry and by nuclear reaction and backscattering techniques. The stoichiometry of the layers was controlled by particle balance. They are amorphous, semi-transparent, and homogeneous throughout each layer. They are hard, non-abrasive and adhere firmly to the substrate. The deposits are chemically inert to molecular oxygen, but they strongly getter O-ions. Chemical erosion rates of a-C/Si:H films by H(+) are less by a factor of 30 than those of pure carbon films (a-C:H).

Additional information

Authors: VON SEGGERN J ET AL., Forschungszentrum Jülich GmbH (KFA) (DE);HOLLENSTEIN C, Centre de Recherches en Physique des Plasmas, Ecole Polytechnique Fédérale de Lausanne (CH);KÜNZLI H, Universität Basel (CH);ROSS G G, INRS-Énergie & Matériaux, Québec (CA);RUBEL M, Royal Institute of Technology, Stockholm (SE);KUNZLI H, Universitat Basel (CH)
Bibliographic Reference: Article: Journal of Nuclear Materials, Vols. 220-222 (1995) pp. 677-681
Record Number: 199510901 / Last updated on: 1995-08-10
Original language: en
Available languages: en
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