The ion-beam mixing of the system Al/Al(2)O(3)
An aluminium layer of 100 nm thickness was mixed with a substrate of alumina (Al/Al(2)O(3)) by means of ion-beam mixing with argon ions of 100 and 200 keV. After the bombardment of the Al-layer with Ar(+)ions, the concentration profiles of the Al in the Al(2)O(3) were determined in order to obtain the distance to which the metallic Al has penetrated into the Al(2)O(3). It could be deduced from the results that the original Al-layer was covered with Al(2)O(3). The thickness of the remaining layers was between 80 and 90 nm independently of the different ion energies and also the surface concentration of Ar was the same, for the 100 keV and the 200 keV samples. The results of a surface analysis (ESCA) showed that between 50 and 80 nm from the surface the concentration of Al(0) decreased rapidly, to become zero at about 300 nm.
Bibliographic Reference: EUR 14632 EN (1992) 19 pp., FS, free of charge
Availability: Available from Joint Research Centre, Publication Department, I-21020 Ispra (Va.) (IT)
Record Number: 199511036 / Last updated on: 1995-08-18
Original language: en
Available languages: en