Community Research and Development Information Service - CORDIS

Abstract

The change of the electrical resistivity of an alpha-copper-15% aluminium alloy as a function of the measuring temperature is determined between ambient temperature and 800 C for increasing and decreasing temperature. It is found that the transition temperature for short range order is 270 C. From the rate of increase of the electrical resistivity during annealing after quenching, the formation energy and the migration activation energy of vacancies were determined as 1.15 (+/-0.11) eV and 0.80 (+/- 0.05) eV respectively. The migration activation energies of interstitials and vacancies decrease with increasing proton flux, and the rate-determining diffusion mechanism during irradiation is dependent on the mobility of interstitials. In well annealed alpha-copper-aluminium alloys the radiation produced point defects annihilate mainly by pair recombination, though below an irradiation temperature of 162 C interstitial clusters are formed. The interstitial clusters can just be detected by measuring the electrical resistivity but their presence causes a large decrease of the diffusion rate.

Additional information

Authors: SCHULE W, Johann Wolfgang Goethe-Universität Frankfurt, Institut für Angewandte Physik (DE);GIEßE M, Johann Wolfgang Goethe-Universität Frankfurt, Institut für Angewandte Physik (DE);GIE?E M, Johann Wolfgang Goethe-Universitat Frankfurt, Institut fur Angewandte Physik (DE)
Bibliographic Reference: EUR 15048 EN (1993) 39 pp., FS, free of charge
Availability: Available from Joint Research Centre, Publication Department, I-21020 Ispra (Va.) (IT)
Record Number: 199511386 / Last updated on: 1995-10-31
Category: PUBLICATION
Original language: en
Available languages: en