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Measurements of the electrical resistivity on almost dislocation free nickel specimens were performed during irradiation with 1.85 MeV electrons. Results obtained for irradiation temperatures varying between -80 C and + 20 C and for production rates varying between 2 x 1.0 E-11 dpa/s and 2 x 1.0 E-11 and 5.8 x E (-10) dpa/s are reported. It was found that the electrical resistivity per Frenkel defect varies with the measuring temperature yielding a value of 2.33 x 1.0 E-4 at -60.0C. Interstitials are not mobile for irradiation temperatures below -60C and quasi-steady-state defect concentrations are obtained in due times for irradiation temperatures higher than -45C. The results are compatible with the finding that the migration activation energy of interstitials decreases with increasing high energy particle flux. It was further found that di-interstitials are formed in situ when existing interstitials encounter dynamic crowdions. Di-interstitials are very mobile at an irradiation temperature of -60C, initiating the formation of interstitial clusters which are enriched in undersized impurity atoms, e.g. in silicon. In the presence of large interstitial clusters or precipitates, the migration activation energy of interstitials decreases further.

Additional information

Authors: SCHÜLE W, JRC Ispra (IT)
Bibliographic Reference: EUR 15057 EN (1993) 35 pp., FS, free of charge
Availability: Available from Joint Research Centre, Publication Department, I-21020 Ispra (Va.) (IT)
Record Number: 199511398 / Last updated on: 1995-10-31
Original language: en
Available languages: en
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