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Abstract

Beryllium doped copper was irradiated with 1.85eV electrons for 5.2 x 1.0 E5 s at a temperature of -33 C. A change in resistivity of 6.75 nanoOhm/cm was found, which recovered following an annealing procedure between 40 C and 180 C back to the initial value. This behaviour is attributed to recovery stage IV, in which vacancies are mobile and recombine with interstitial clusters.

Additional information

Authors: HEIECK J, JRC Ispra (IT)
Bibliographic Reference: EUR 16311 EN (1995) 14 pp., FS, free of charge
Availability: Available from Joint Research Centre, Publication Department, I-21020 Ispra (Va.) (IT)
Record Number: 199511415 / Last updated on: 1995-10-31
Category: PUBLICATION
Original language: en
Available languages: en