Residence sites of fluorine in crystalline silicon and highly oriented pyrolytic graphite
The electric field gradient (efg) at F impurity sites in crystalline silicon and highly oriented pyrolytic graphite (HOPG) have been compared with cluster model calculations using both Hartree-Fock (HF) and density functional theory (DFT) formalisms. The residence site of F in HOPG is consistent with efg calculations at a location midway between the graphite layers with point group symmetry C(2h). In the case of 19F implantation in silicon, three quadrupole interactions were detected. One of these is in agreement with the predicted efg for an interstitial bond centre site (gamma(q) = 35.2 MHz).
Bibliographic Reference: Article: Hyperfine Interactions, Vol. 96 (1995) pp. 23-35
Record Number: 199511508 / Last updated on: 1995-11-03
Original language: en
Available languages: en