The ion-beam mixing of an aluminium layer with an alumina substrate and the migration distance of the aluminiumFunded under: JRC-ADVMAT 2C
An enhanced adhesion of thin metallic films deposited on a ceramic substrate may be obtained by ion-beam mixing. The resulting migration distance into the substrate of the atoms of the deposited film can be considered a measure of the mixing efficiency. Films of polycrystalline aluminium with a nominal thickness of either 100 or 200 nm were deposited by sputtering on polycrystalline sintered alumina substrates. From AES profiles of the concentration distribution of the aluminium Al(0) and Al(3+), the thickness of the aluminium films after argon ion implantation are deduced to be about 110-120, 180-190 and 80-90 nm. These values are in good agreement with the nominal ones of 100-200 nm.
Bibliographic Reference: EUR 15373 EN (1993) 10 pp., FS, free of charge
Availability: Available from Joint Research Centre, Publication Department, I-21020 Ispra (Va.) (IT)
Record Number: 199511592 / Last updated on: 1995-12-12
Original language: en
Available languages: en