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A full analysis of the aerial image formation in photoresist layers is presented. This process is of particular importance when the recorded structures have dimensions comparable to the wavelength of the incident radiation. Simulation of the 3-dimensional resist profile is necessary to understand and control pattern transfer using dry etching, electroplating, lift-off techniques, etc.

A rigorous electromagnetic model is applied which exactly calculates the standing pattern inside the photoresist. Exact boundary matching of the E-field and H-field at the top and bottom interfaces of the photoresist layer allows the exposing intensity distribution inside the photoresist layer to be calculated. Two approximate models, producing simpler analytic expressions have been developed to simulate an aerial image in the photoresist. These simpler approximate models greatly ease computation especially when there are many incident beams or proximity effects. This is practically important for holographic recording of microstructures for use in calibration and standardization.

Additional information

Authors: BABIN S, Telekom AG, Darmstadt (DE);SHERIDAN J T, JRC Ispra (IT)
Bibliographic Reference: Paper presented: 1996 International Symposium on Microlithography: Optical Microthography IX, Santa Clara (US), March 10-15, 1996
Availability: Available from (1) as Paper EN 39530 ORA
Record Number: 199610188 / Last updated on: 1996-03-01
Original language: en
Available languages: en
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