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The growth of hydrocarbon films (C:H films) from a methane plasma and their erosion by a hydrogen plasma are investigated by means of in situ ellipsometry. The kinetic energy of the ions impinging on the surface during deposition and erosion is varied by applying a rf bias resulting in a dc self-bias ranging from floating potential up to 100 V. In addition, the substrate temperature is varied from room temperature up to 600 K. The direct comparison between the growth and erosion indicates that the temperature dependence of the growth rate during deposition from a methane plasma is caused by the temperature-dependent erosion due to reactions with abundant atomic hydrogen. Furthermore, the synergistic effects between hydrogen ions an atomic hydrogen on the etch rate of C:H films are investigated.

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Authors: VON KEUDELL A, Max-Planck-Institut für Plasmaphysik, Garching bei München (DE);JACOB W, Max-Planck-Institut für Plasmaphysik, Garching bei München (DE)
Bibliographic Reference: Article: Journal of Applied Physics, Vol. 79 (196) No. 2, pp. 1092-1098
Record Number: 199610518 / Last updated on: 1996-05-13
Original language: en
Available languages: en