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Abstract

Basic work on radiation damage behaviour in compound materials requires separate analysis of lattice defects in each sublattice. MgAl(2)O(4) spinel single crystals of <110> and <100> orientation were analysed by means of the RBS/chanelling technqiue using 2.0 - 2.9 MeV (4)He beams, before and after implantation with Kr and Xe ions. The results of our study indicate that only the Al- and O- sublattices can be heavily disordered. Damage peaks for these 2 sublattices grow continuously with increasing implantation flow and eventually reach the random level for approximately 2x10(16) Kr(Xe)/cm(2). The magnesium sublattice is much more stable: the height of the Mg damage peak saturates at about 20% of the random yield. A defect recovery stage at the temperature close to 500 C was observed.

Additional information

Authors: TURDS A, Soltan Institute for Nuclear Studies, Warsaw (PL);HATZKE H J, JRC Karlsruhe (DE);DRIGO A, Universitá degli Studi di Padova, Dipartimento di Fisica Galileo Galilei (IT);SAMBO A, Universitá degli Studi di Padova, Dipartimento di Fisica Galileo Galilei (IT);FALCONE R, CNRSM Brindisi (IT)
Bibliographic Reference: Paper presented: 4th European Conference on Accelerators in Applied Research and Technology, Zürich (CH), August 29 - September 2, 1995
Availability: Available from (1) as Paper EN 39444 ORA
Record Number: 199610595 / Last updated on: 1996-05-27
Category: PUBLICATION
Original language: en
Available languages: en