CVD Deposits to Increase the Resistance to Corrosion of Thermal Barriers
Silicon dioxide (SiO(2)) films were deposited on thermal barrier coatings (TBC) by means of metal-organic chemical vapour deposition (MOCVD) in an attempt to reduce the external porosity. The thermal barrier coatings were fabricated by plasma spray method and consisted of an outer yttria-stabilized zirconia layer, an intermediate bonding layer of a CoNiCrAlY (AMDRY 995) and a nickel superalloy substrate (UD520). The SiO(2) layers were deposited using tetraethylorthosilicate (TEOS) as a precursor and with hydrogen and oxygen as carrier gas and reactant gases respectively. Following the thin film deposition the effectiveness of sealing was evaluated, firstly by porosity measurements at room temperature and secondly by testing the oxidation resistance at 1000 C.
Bibliographic Reference: Paper presented: Giornata di Studio "Materiali per turbine a gas industriali", Milano (IT), April 23, 1996
Availability: Available from (1) as Paper EN 39694 ORA
Record Number: 199610626 / Last updated on: 1996-06-10
Original language: it
Available languages: it