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Abstract

The erosion behaviour of fibre reinforced SiC under deuterium ion bombardment is investigated in the ion energy range between 20 eV and 1 keV. The sputtering yieids are compared with earlier results obtained from SiC samples with different structure and fabrication. At D+ energies below 100 eV chemical erosion of C is found which results in a surface enrichment of Si. the surface composition modifications are investigated by Auger Electron Spectroscopy. The surface concentrations have been measured as a function of target temperature up to 1000 K. It is found that the Si surface enrichment reflects the ion energy and temperature dependence of the chemical erosion of C in SiC. At low D+ energies a Si rich thin altered layer covering the SiC target is formed.

Additional information

Authors: PLANK H, Max-Plank-Institut für Plasmaphysik, Garching bei München (DE);SCHWÖRER R, Max-Plank-Institut für Plasmaphysik, Garching bei München (DE);ROTH J, Max-Plank-Institut für Plasmaphysik, Garching bei München (DE);SCHWORER R, Max-Plank-Institut fur Plasmaphysik, Garching bei Munchen (DE)
Bibliographic Reference: Article: Nuclear Instruments and Methods in Physics Research B, Vol. III (1996), pp. 63-69
Record Number: 199610889 / Last updated on: 1996-09-16
Category: PUBLICATION
Original language: en
Available languages: en