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Boron nitride coatings have been deposited in a hot wall plasma assisted chemical vapour deposition (PACVD) reactor with a capacitive coupling at 13.56 MHz, from a BCl(3)-N(2)-H(2)-Ar mixture. The effect of experimental conditions has been correlated with the deposition rate, coating microstructure and type of bonding as revealed with scanning electron microscopy (SEM) and Fourier transformed infra red spectroscopy (FTIR). The nature and concentration of the species present in the gas phase is investigated with optical emission spectroscopy (OES) and mass spectrometry (MS). In particular, the influence of radio frequency power (self bias) and hydrogen concentration on the nature of the BN phases is highlighted. Though silicon substrates are placed both on the anode and the cathode, coatings containing c-BN can only grow on the cathode. It is shown that in addition to the ionic selective etching of the h-BN sites over the cubic sites, a chemical etching due to the chlorine species is likely to occur.

Additional information

Authors: SCHAFFNIT C, JRC Petten (NL);THOMAS L, JRC Petten (NL);HUGON R, JRC Petten (NL);ROSSI F, JRC Petten (NL)
Bibliographic Reference: Paper presented : ICMCTF 96, San Diego (US), 22-26 April 1996
Availability: Available from (1) as Paper EN 39920 ORA
Record Number: 199610929 / Last updated on: 1996-09-16
Original language: en
Available languages: en
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