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Abstract

The third harmonic generation of high-power far-infrared radiation in n-silicon was investigated experimentally and theoretically with emphasis on the conversion efficiency. The parameters of the laser source used for the experiments were: wavelength: 676 mm; power: up to 2 MW; pulse duration: about 100 ns.
The main experimental feature of the third harmonic generation experiments we report was the use of a new type of detector with a very fast response. This detector made it possible to measure the power at the fundamental as well as at the third harmonic frequency with full temporal resolution during the laser pulse. Therefore the power dependence of the third harmonic generation efficiency could be measured directly.

Additional information

Authors: URBAN M, Ecole Polytechnique Fédérale de Lausanne, Centre de Recherche en Physique des Plasmas (CH);SIEGRIST M R, Ecole Polytechnique Fédérale de Lausanne, Centre de Recherche en Physique des Plasmas (CH)
Bibliographic Reference: Article: Proceedings of the 21st International Conference on Infrared and Millimeter Waves (1996)
ISBN: ISBN 3-00-000800-4
Record Number: 199611216 / Last updated on: 1996-11-11
Category: PUBLICATION
Original language: en
Available languages: en