Thermally-induced evolution of codeposited Co-Si layers on Si(100) surfaces
The formation of ultrathin epitaxial layers of CoSi(2) on Si(100) surfaces has been studied by means of valence-band and core-level photoemission spectroscopy with synchrotron radiation, low-energy electron diffraction (LEED) and Auger electron spectroscopy (AES). The COSi(2) films are prepared by the template method in which an amorphous layer with CoSi(2) stoichiometry is coevaporated on top of a 2.6-3 monolayer thick Co overlayer at room temperature. The amorphous layer does not react to CoSi(2). Annealing to 300 C leads to the crystallization of the layer and consists of disilicide in CaF(2) structure. A comparison with previous experimental results and existing theoretical electronic structure calculations suggests that the new silicide phase can be identified as adamantane disilicide.
Bibliographic Reference: Article: Surface Science, Vol. 365 (1996) pp. 403-410
Record Number: 199611347 / Last updated on: 1996-11-21
Original language: en
Available languages: en