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Abstract

Boron-carbon-nitrogen, B(x)C(y)N(z), thin films deposited on silicon substrates were analysed with alpha, rho reactions on boron and nitrogen and alpha, alpha backscattering on carbon. The elemental composition was derived from ratios of the simultaneously measured yields at angles of 135 degrees for the alpha, rho reactions and 165 degrees for the alpha, alpha scattering using measured cross sections and tabulated stopping powers. The beam energy loss in the film which enters the cross section integral and the film thickness were determined from the energy shift in the Rutherford backscattering (RBS) spectrum of the silicon substrate. The method was developed within a network for the production of hard B(x)C(y)N(z) coatings. The simplicity of the technique but also its dependence on the cross section accuracy of the nuclear processes involved are demonstrated by the analysis of a selected sample.

Additional information

Authors: GIORGINIS G, JRC Geel (BE);HULT M, JRC Geel (BE);PERSSON L, JRC Geel (BE);CRAMETZ A, JRC Geel (BE);GARCIA V, JRC Geel (BE)
Bibliographic Reference: Paper presented: 14th International Conference on the Application of Accelerators in Research and Industry, Denton, Texas (US), November 6-9, 1996
Availability: Available from (1) as Paper EN 40232 ORA
Record Number: 199710011 / Last updated on: 1997-02-03
Category: PUBLICATION
Original language: en
Available languages: en