A precise new method to evaluate Monte Carlo simulations of electron transport in semiconductors
Monte Carlo simulations of the electron drift response to an alternating current electric field are used to calculate the power dependent third harmonic generation efficiency for far-infrared radiation. The results are compared with far-infrared frequency tripling experiments. It is shown that the nonlinear optical properties are much more sensitive to parameter changes in the Monte Carlo simulation than conventional drift velocity results. Hence, this is a sensitive method to test Monte Carlo transport simulations.
Bibliographic Reference: Article: Applied Physics Letters, Vol. 69 (1996) No. 12, pp. 1776-1778
Record Number: 199710059 / Last updated on: 1997-02-26
Original language: en
Available languages: en