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Abstract

The bombardment of Si with Cs is investigated by computer simulation with the program TRIDYN. The dynamic target changes due to the bombardment as composition profiles and the corresponding changes in sputtering yield and reflection coefficient are studied as functions of incident conditions. The incident energy is varied from 0.1 to 100 keV, and for 4 and 40 keV the dependence on the incident angle is considered. The dynamic results are compared with data from static calculations (low fluence). The influence of interaction potentials and of the choice of three surface binding energy models on the results are discussed.

Additional information

Authors: ECKSTEIN W, Max-Planck-Institut für Plasmaphysik, Garching bei München (DE);HOU M, Université de Bruxelles, Physique des Solides Irradiés (BE);SHULGA V I, Moscow State University, Institute of Nuclear Physics (RU)
Bibliographic Reference: Article: Nuclear Instruments and Methods in Physics Research B, Vol. 119 (1996) No. 4, pp. 477-485
Record Number: 199710251 / Last updated on: 1997-04-01
Category: PUBLICATION
Original language: en
Available languages: en