Synthesis and properties of carbon nitride films deposited using a dual ion beam method
Carbon nitride films were synthesized by dual ion beam deposition. It has been found that the film growth occurs only if the ion-to-atom arrival ratio I/A is smaller than a critical value, indicating chemical sputtering. Experimental evidence was obtained by monitoring the gas evolved during deposition with a quadrupole gas analyzer. The maximum value of nitrogen content measured by atomic emission spectroscopy (AES) was about 35 at%. Fourier transform infrared (FTIR) spectroscopy was used to investigate the chemical bonding structure. Hardness measurements with values up to 20 GPa were recorded using a depth sensing nanoindenter.
Bibliographic Reference: Paper presented: XIII National Congress on Vacuum Science and Technology, Milan (IT), February 14-16, 1996
Availability: Available from (1) as paper EN 40392 ORA
Record Number: 199710509 / Last updated on: 1997-05-09
Original language: en
Available languages: en