Negative dynamic mobility of electrons in silicon in the far-infrared range
In this paper Monte Carlo simulation of electron response to a strong pumping wave (443 GHz) and weak signal harmonic waves (886 and 1329 GHz) in silicon was performed. A negative dynamic conductivity is found to arise for 1329 GHz above a threshold value of the pumping wave amplitude and below a maximum value of the signal wave amplitude in a limited range of phase difference between the waves.
Bibliographic Reference: Article: International Journal of Infrared and Millimeter Waves (1997)
Record Number: 199710653 / Last updated on: 1997-06-09
Original language: en
Available languages: en