Etching of boron nitride in rf plasmas
This work demonstrates that the chemical etching of hexagonal boron nitride is possible in addition to the sputtering due to the ion bombardment in rf plasma environments. In order to study the occurrence of possible physical and chemical mechanisms, post-treatments of boron nitride coatings have been performed using respectively pure argon, Ar/H(2) and Ar/Cl(2) plasma mixtures. This study reveals the effects of ion bombardment, H/H(2) atoms, and Cl/Cl(2) on h-BN content in the films. It has been found that, in addition to ion bombardment, hydrogen atoms and more efficiently Cl and/or Cl(2) can be considered as chemical etchant of sp(2) bonded boron nitride.
Bibliographic Reference: Article: Journal of Vacuum Science and Technology
Record Number: 199710772 / Last updated on: 1997-07-02
Original language: en
Available languages: en