Ion assisted etching of boron nitride in RF capacitive discharges
Thin films composed of a h-BN/c-BN mixture have been treated by Ar, Ar/H(2) and Ar/Cl(2) plasma in a radio frequency (RF) capacitively coupled discharge. It was found that the c-BN concentration in the film as measured by Fourier transform infrared (FTIR) is increased by post treatments under the described conditions. The Ar plasma used to identify the ion bombardment effect results in a slight increase in c-BN concentration. Comparatively, Ar/H(2) and Ar/Cl(2) treatments are more efficient in increasing the c-BN concentration and illustrate chemical effect and ion assisted preferential etching of the h-BN by atomic hydrogen and Cl ions. These preliminary results are discussed in view of a new deposition route for stress reduced c-BN.
Bibliographic Reference: Paper presented: ICAM '97, Strasbourg (FR), June 16-21, 1997
Availability: Available from (1) as Paper EN 40692 ORA
Record Number: 199710903 / Last updated on: 1997-07-23
Original language: en
Available languages: en