c-BN formation by PECVD in the B - N - Cl - H system: ionic and chemical aspects
BN thin films have been synthesized by radio frequency (RF) plasma enhanced chemical vapour deposition (PECVD) from BCl(3)/N(2)/H(2)/Ar mixtures. C-BN formation has been studied through correlations between gap phase characterization (by optical emission spectroscopy, mass spectroscopy and electrical measurements) and thin films analysis (by Fourier transform infrared spectrometry for structure determination). In particular, the occurrence of physical and possible chemical mechanisms is studied with the help of post-treatments of as-deposited BN coatings in pure Ar, Ar/H(2) and Ar/Cl(2) plasma mixtures. It is shown that in addition to well-known ion-induced formation of the cubic phase, a chemical etching also occurs, due to the presence of hydrogen and chlorine species, which leads to a relative increase in the cubic content of the thin film.
Bibliographic Reference: Paper presented: 11th International Conference on Surface Modification Technologies, Paris (FR), September 8-10, 1997
Availability: Available from (1) as Paper EN 40716 ORA
Record Number: 199710910 / Last updated on: 1997-07-23
Original language: en
Available languages: en