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Abstract

Following test specifications for conventional crystalline silicon modules IEC 1215 based on data from the Jet Propulsion Laboratories Group V tests on acceleration factors for silicon electronic devices, an equivalent life time of 10 years for a silicon based photovoltaic (PV) module may be accomplished by an high temperature and high humidity exposure of 1000 hours at 85 C and 85%RH. It is unclear whether the basis for this specification may be applied equally to thin film amorphous silicon devices as has been proposed in IEC 1646. The authors present results of continuous accelerated life time testing of amorphous silicon thin film photovoltaic modules by high temperature high humidity exposure (damp heat testing).

Additional information

Authors: DUNLOP E D, ASIC Services, Ayr (GB);BISHOP J, ASIC Services, Ayr (GB);ZAAIMAN W, ASIC Services, Ayr (GB);OSSENBRINK H A, ASIC Services, Ayr (GB)
Bibliographic Reference: Paper presented: 14th European Photovoltaic Solar Energy Conference & Exhibition, Barcelona (ES), June 30-July 4, 1997
Availability: Available from (1) as Paper EN 40752 ORA
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