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Abstract

The effect of 690 keV Xe ion irradiation at three different dosage levels, 1E15 cm{-2}, 5E15 cm {-2} and 10E15 cm{-2}, on the microstructure of amorphous-MoSi(2)/amorphous-SiC nanolayer composites has been studied using transmission electron microscopy. Results show that the depth of radiation damage in this multilayer material is approximately 80 nm, which agrees qualitatively well with the calculated damage depth calculated by TRIM. A diffraction ring corresponding to the (1011) plane of C40 MoSi(2) was found in the electron diffraction pattern taken from the irradiated regions; the C40 phase is also found after thermal annealing of amorphous MoSi(2) at 500 C or above. In the damaged regions SiC layers were found to spheroidize while the nanocrystalline grains in the MoSi(2) layers appeared to become more coarse with increasing dose.

Additional information

Authors: LU Y-C ET AL, Los Alamos National laboratory, Materials Science and Technology Division (US);HIRVONEN J-P, JRC Petten (NL);RÜCK D, GSI, Darmstadt (DE)
Bibliographic Reference: Article: Nuclear Instruments and Methods in Physics Research B, vol. 127/128 (1997) pp. 648-650
Record Number: 199711541 / Last updated on: 1997-12-09
Category: PUBLICATION
Original language: en
Available languages: en