Plasma assisted chemical vapour deposition of boron nitride using BCl(3)-N(2)-H(2)-Ar
Boron nitride coatings have been deposited by plasma assisted chemical vapour deposition (PACVD) from a BCl(3)/N(2)/H(2)/Ar gas mixture in a hot wall capacitively coupled radio-frequency (13.56 MHz) reactor. The nature of active species in the plasma phase during deposition has been investigated using optical emission spectroscopy (OES) and mass spectroscopy (MS). The characterization was performed by step: first an Ar/H(2) plasma was studied in order to understand the influence of molecular hydrogen in the discharge mixture. Then the two precursors N(2) and BCl(3) were added and the new gas mixture studied. Finally the deposition plasma was investigated. These characterizations have been correlated with microstructure and the c-BN concentrations as determined by scanning electron microscopy (SEM) and Fourier transformed infrared spectroscopy (FTIR). The study demonstrates the major role of atomic hydrogen on the possible mechanisms leading to BN deposition.
Bibliographic Reference: Paper presented: Second European Topical Conference on Hard Coatings, Lisboa (PT), September 22-24, 1997
Availability: Available from (1) as Paper EN 40980 ORA
Record Number: 199711562 / Last updated on: 1997-12-09
Original language: en
Available languages: en