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Abstract

Hydrogenated amorphous boron (a-B:H) thin films were prepared by radio-frequency plasma deposition using B(2)H(6) (10%) in H(2) as precursor gas. The influence of the substrate temperature and self-bias on the a-B:H film structure was investigated. The boron and hydrogen atom densities were determined by ion-beam analysis. The film structure, especially the bonding of hydrogen to boron, was investigated by Fourier transform infrared (FTIR) spectroscopy. The FTIR data were quantified by using a new formalism which allows a proper calculation of the extinction coefficient from the FTIR spectra. The intensities of the different boron-hydrogen absorption bands were compared with the ion-beam analysed hydrogen atom densities to determine the absorption strength of the B-H terminal and B-H-B bridge bonds. A non-negligible fraction of hydrogen is shown to be bonded to boron in a B-H-B bridge bond.

Additional information

Authors: SAß M, Max-Planck-Institut für Plasmaphysik, Garching bei München (DE);ANNEN A, Max-Planck-Institut für Plasmaphysik, Garching bei München (DE);JACOB W, Max-Planck-Institut für Plasmaphysik, Garching bei München (DE);SA? M, Max-Planck-Institut fur Plasmaphysik, Garching bei Munchen (DE)
Bibliographic Reference: Article: Journal of Applied Physics, Vol. 82 (1997) No. 4, pp. 1905-1908
Record Number: 199711631 / Last updated on: 1997-12-09
Category: PUBLICATION
Original language: en
Available languages: en