Optimum third harmonic generation efficiency in the far infrared in Si, GaAs and InP
A Monte Carlo technique is used to investigate the nonlinear drift response of electrons to high power electromagnetic waves in Si, GaAs and InP. The first and third harmonic drift velocity amplitudes and phases are presented as functions of the pumping wave frequency in the range of 200 GHz to 500 GHz. The third harmonic generation efficiency is found to reach a maximum at a pumping wave amplitude of 10-25 kV/cm depending on the material and the lattice temperature. Cooling down to liquid nitrogen temperature results in an improvement of the efficiency by a factor of 2 to 10, depending on the material and the pumping wave amplitude. Cooled GaAs and InP are both an order of magnitude more efficient than Si at ambient temperature, for which to date the best measured performance has been reported.
Bibliographic Reference: Article: Europhysics Letters (1997)
Record Number: 199810181 / Last updated on: 1998-02-12
Original language: en
Available languages: en