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The effect of deposition temperature and growth rate on the sp(3) content of carbon films has been investigated. By controlling the scattering angles of the parallel electron energy loss spectrometer (PEELS) measurements, a value of (66 ± 10) % for the sp(3) content was obtained. A sharp transition temperature of the sp(3) content of the carbon films as a function of deposition temperature has been reported several times. The value of this transition temperature has varied from 150 C to about 300 C depending on the growth mechanism. In this paper, high values varying from 300 C to 400 C for the transition temperature have been measured. High momentary growth rates of up to 2000 nms{-1} have been obtained by using pulsed vacuum arc deposition. The transition temperature has been observed to depend on the momentary growth rate of the carbon film. The transition has been explained to be a relaxation process which includes diffusion of carbon atoms at the near surface. The results have been analysed by using a model which was originally developed for radiation enhanced diffusion. An activation energy of 0.65 eV was obtained. The model predicts qualitatively the transition temperatures also in the case of the lower deposition rates reported in literature.

Additional information

Authors: KOSKINEN J, VTT Manufacturing Technology (FI);HIRVONEN J-P, JRC Ispra (IT);KERÄNEN J, Tampere University of Technology, Centre for Electron Microscopy (FI)
Bibliographic Reference: Paper presented: 1st Specialist Meeting on Amorphous Carbon, Cambridge (GB), 30-31 July 1997
Availability: Available from (1) as Paper EN 41118 ORA
Record Number: 199810212 / Last updated on: 1998-02-12
Original language: en
Available languages: en