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Amorphous carbon-deuterium (a-C:D) films on beryllium substrates were vacuum annealed while the composition versus depth was followed using Rutherford backscattering, elastic recoil detection and Auger electron spectroscopy. The a-C:D film reacts with the Be substrate to form stoichiometric beryllium carbide, Be(2)C. The reaction begins at the interface and progresses through the film around 500 C until the entire film has reacted. D is absent from the reacted portion of the film but is still present in the unreacted carbon. The a-C:D films are removed from the Be without forming carbide by heating in oxygen at 400 C. Ion beam analysis was also used to study the oxidation of Be at temperatures up to 680 C. Through sequential exposures to different isotopes of oxygen it was shown that oxidation occurs by permeation of Be from the metal/oxide interface to the outer surface.

Additional information

Authors: ROTH J, Max-Planck-Institut für Plasmaphysik, Garching bei München (DE);JACOB W, Max-Planck-Institut für Plasmaphysik, Garching bei München (DE);WAMPLER W R, Sandia National Laboratories, Albuquerque (US)
Bibliographic Reference: Article: Journal of Nuclear Materials, Vol. 250 (1997). pp. 23-28
Record Number: 199810324 / Last updated on: 1998-03-09
Original language: en
Available languages: en
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