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An innovative inductively coupled plasma (ICP) source has been designed and tested for the deposition of tungsten/tungsten carbide multilayers by plasma enhanced chemical vapour deposition from tungsten F(6). The reactor is equipped with a double inductor powered by 2 low and high frequencies for induction heating of the substrate and plasma production, respectively. Characterization of the plasma source by magnetic and Langmuir probes as well as energy resolved ion mass spectrometry indicate that plasma densities as high as 5E12 cm{-3} can be obtained over a large pressure range. Modelling of the ICP source equivalent circuit is related to impedance measurements. Good agreement between modelling and experiment is obtained. Ion energy distribution functions as a function of pressure are presented and related to the first results of tungsten deposition. Relationships between microstructure and plasma parameters are presented.

Additional information

Authors: COLPO F, JRC Ispra (IT);ROSSI F, JRC Ispra (IT);GIBSON N, JRC Ispra (IT);GILLILAND D, JRC Ispra (IT)
Bibliographic Reference: Paper presented: 25th International Conference on Metallurgical Coatings and Thin Films, San Diego (US), April 27 - May 1, 1998
Availability: Available from (1) as Paper EN 41278 ORA
Record Number: 199810478 / Last updated on: 1998-05-05
Original language: en
Available languages: en
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