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Abstract

The retention of 1 keV and 8 keV deuterium implanted in boron (B), silicon (Si) and titanium (Ti) doped graphites and in the carbides B(4)C, SiC and TiC up to 6.7E19 D atoms/cm{2} has been studied at room temperature with thermal desorption spectroscopy (TDS) and ion beam analysis. Compared to pyrolytic graphite, all doped graphites showed a tendency to increased retention of deuterium, especially the materials with high porosity. For the carbides the saturation concentration in the implantation zone in B(4)C is about 0.4 D per target atom and therefore comparable to the saturation concentration of D in graphite. SiC exhibits a significantly higher saturation concentration of 0.6 D per target atom, whereas TiC shows a significantly lower saturation concentration of 0.15 D per target atom.

Additional information

Authors: MAYER M, Max-Planck-Institut für Plasmaphysik, Garching bei München (DE);BALDEN M, Max-Planck-Institut für Plasmaphysik, Garching bei München (DE);BEHRISCH R, Max-Planck-Institut für Plasmaphysik, Garching bei München (DE)
Bibliographic Reference: Article: Journal of Nuclear Materials, Vol. 252 (1998) pp. 55-62
Record Number: 199810532 / Last updated on: 1998-05-05
Category: PUBLICATION
Original language: en
Available languages: en