Light ion irradiation creep of SiC Fibres in torsion
Creep tests were conducted in torsion on TEXTRON type SCS-6 silicon carbide (SiC) fibres during irradiations with 14 MeV deuterons at 450 C, 600 C and 800 C. The fibres, produced by chemical vapour deposition (CVD), should be representative of the chemical vapour infiltrated (CVI) matrix of a SiC/SiC composite. SiC is known to undergo irradiation induced swelling which occurs without an incubation dose for temperatures below about 1000 C. Such swelling in SiC may mask the irradiation creep strain in a tensile experiment, but plays a minor role in torsion creep tests. The torsional irradiation creep curves are characterized by long lasting strain transients during which the creep rate slows down before reaching approximately constant values. The steady state torsional creep rate exhibited a linear dependence on stress and particle flux and it decreased when the temperature was increased. The temperature dependence of the torsional creep rate in the range 450 C to 800 C is similar to that of swelling for neutron irradiated SiC.
Bibliographic Reference: Article: Journal of Nuclear Materials (1998)
Record Number: 199810908 / Last updated on: 1998-08-07
Original language: en
Available languages: en