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In this paper the nonlinear drift response of electrons in Si, GaAs and InP crystals to highpower electromagnetic waves is investigated by means of a Monte Carlo technique, with the aim of developing an efficient frequency converter for 1 THz output radiation. Drift velocity amplitudes and phases determining the conversion efficiency are calculated for the 1st, 3rd and 5th harmonics in the pumping wave amplitude range of 10 < E(1) < 100 kV/cm, for frequencies between 30 and 500 GHz, and at the lattice temperatures of 80, 300 and 400 K.

It is found that the efficiency is a maximum at the pumping wave amplitude of the order of 10 kV/cm depending on the intervalley electron scattering parameters and the lattice temperature. Cooling the nonlinear crystal down to the liquid-nitrogen temperature enhances the efficiency several times in Si and by orders of magnitude in GaAs and InP. This is promising for obtaining a 10% conversion efficiency.

Additional information

Authors: SIEGRIST M R, Centre de Recherches en Physique des Plasmas, Ecole Polytechnique Fédérale de Lausanne (CH);RAGUOTIS R, Semiconductor Physics Institute, Vilnius (LT);BRAZIS R, Semiconductor Physics Institute, Vilnius (LT)
Bibliographic Reference: An article published in: Journal of Applied Physics, 84 (7), (1998), pp. 3474-3482
Record Number: 199810992 / Last updated on: 1998-09-15
Original language: en
Available languages: en