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This report consists of articles by the speakers at the seminar on Nanostructures in semiconductors. A broad range of topics is covered from physics of production and characterisation to the industrial use of building elements of dimensions in the nm range.

The optical characteristics of quantum dots, and their possible use, and the foundations and construction elements of tunnelling structures are discussed, as well as molecular beam epitaxia for silicon nanoelectonics. Also dealt with are the nanoanalysis of mesoscopic structures, the simulation of nano-construction elements and nanolithography. Other reports are concerned with SiGe-nanostructures for communication technology and the development of structural quantities from nanostructures to single electron switching. In the articles, the conversion of new principles into economic use is documented. .

Additional information

Authors: SCHLACHETZKI A, Physikalisch- Technische Bundesanstalt, Braunschweig (DE);KUNZMANN H (EDITORS), Physikalisch- Technische Bundesanstalt, Braunschweig (DE)
Bibliographic Reference: Report: PTB-F-31 DE (1998) 133pp.
Availability: Available from Physikalisch Technische Bundesanstalt, Bundesallee 100, 38116 Braunschweig (DE)
ISBN: ISBN 3-89701-115-8
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