Modelling of the oxidation kinetics a yttria-doped hot-pressed silicon nitride
This paper reports on a study of the oxidation kinetics of a hot-pressed 9 wt% Y(2)O(3), Si(3)N(4) over the temperature range 800 C to 1200 C. Data obtained clearly show that oxidation kinetics are mostly non-parabolic, suggesting that the oxidation mechanism is more complex than simple diffusion. The oxidation kinetics are modelled and the mechanisms discussed.
Bibliographic Reference: Article: Journal of the European Ceramics Society (1997)
Record Number: 199811187 / Last updated on: 1998-10-09
Original language: en
Available languages: en