Subcritical crack growth and creep behaviour of silicon carbide for heat exchanger applications
The long term mechanical properties of a sintered silicon carbide intended as a heat exchanger material have been investigated. Failure occurs by subcritical crack growth from surface located inherent defects at high stresses. Below a threshold stress oxidation blunting of these surface defects occurs and causes a transition from subritical crack growth to diffusion creep as life-limiting mechanism. Unlike other ceramics, the threshold stress for subcritical crack growth falls within the low probability range of fast fracture. Failure mechanism maps presenting the life-limiting mechanisms of the investigated sintered silicon carbide over a range of stresses and temperatures are presented.
Bibliographic Reference: Paper presented: 2nd Yamazaki International Symposium, Tokyo (JP), September 3-4, 1998
Availability: Available from (1) as Paper EN 41723 ORA
Record Number: 199811252 / Last updated on: 1998-10-27
Original language: en
Available languages: en